Toshiba Semiconductor and Storage TW045N120C,S1F

G3 1200V SIC-MOSFET TO-247 45MO

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TW045N120C,S1F
Package: Tube
Datasheet: PDF
Stock: 15
SKU: TW045N120C,S1F
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Unit Price: $23.7100

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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	59mOhm @ 20A, 18V
Vgs(th) (Max) @ Id	5V @ 6.7mA
Gate Charge (Qg) (Max) @ Vgs	57 nC @ 18 V
Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	1969 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	182W (Tc)
Operating Temperature	175°C
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	30

N-Channel 1200 V 40A (Tc) 182W (Tc) Through Hole TO-247