Toshiba Semiconductor and Storage TW107N65C,S1F

G3 650V SIC-MOSFET TO-247 107MO

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TW107N65C,S1F
Package: Tube
Datasheet: PDF
Stock: 96
SKU: TW107N65C,S1F
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to Cart

Unit Price: $9.6200

Ext Price: $9.6200

Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	145mOhm @ 10A, 18V
Vgs(th) (Max) @ Id	5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 18 V
Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	76W (Tc)
Operating Temperature	175°C
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	30

N-Channel 650 V 20A (Tc) 76W (Tc) Through Hole TO-247