Toshiba Semiconductor and Storage XPN9R614MC,L1XHQ

MOSFET P-CH 40V 40A 8TSON

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage XPN9R614MC,L1XHQ
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 13
SKU: XPN9R614MC,L1XHQ
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Unit Price: $1.4000

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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	Automotive, AEC-Q101, U-MOSVI
Package	Tape & Reel (TR)
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	9.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.1V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	64 nC @ 10 V
Vgs (Max)	+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	840mW (Ta), 100W (Tc)
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance-WF (3.1x3.1)
Package / Case	8-PowerVDFN
Base Product Number	XPN9R614
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	5,000

P-Channel 40 V 40A (Ta) 840mW (Ta), 100W (Tc) Surface Mount 8-TSON Advance-WF (3.1x3.1)