Transphorm TP65H015G5WS

650 V 95 A GAN FET

Manufacturer: Transphorm
Manufacturer's number: Transphorm TP65H015G5WS
Package: Tube
Datasheet: PDF
Stock: 274
SKU: TP65H015G5WS
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to Cart

Unit Price: $33.5400

Ext Price: $33.5400

Details

Parameters
Vgs(th) (Max) @ Id	4.8V @ 2mA
Gate Charge (Qg) (Max) @ Vgs	100 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5218 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	266W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	1707-TP65H015G5WS
Standard Package	30
Mfr	Transphorm
Series	SuperGaN™
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	93A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	18mOhm @ 60A, 10V

N-Channel 650 V 93A (Tc) 266W (Tc) Through Hole TO-247-3