Transphorm TP65H035G4WSQA

650 V 46.5 GAN FET

Manufacturer: Transphorm
Manufacturer's number: Transphorm TP65H035G4WSQA
Package: Tube
Datasheet: PDF
Stock: 426
SKU: TP65H035G4WSQA
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Unit Price: $20.0900

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Details

Parameters
Mfr	Transphorm
Series	Automotive, AEC-Q101
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	47.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	41mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	4.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	187W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3
Moisture Sensitivity Level (MSL)	3 (168 Hours)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	1707-TP65H035G4WSQA
Standard Package	30

N-Channel 650 V 47.2A (Tc) 187W (Tc) Through Hole TO-247-3