Transphorm TP65H050G4WS

650 V 34 A GAN FET

Manufacturer: Transphorm
Manufacturer's number: Transphorm TP65H050G4WS
Package: Tube
Datasheet: PDF
Stock: 469
SKU: TP65H050G4WS
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Details

Parameters
Mfr	Transphorm
Series	SuperGaN®
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	60mOhm @ 22A, 10V
Vgs(th) (Max) @ Id	4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	119W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3
Base Product Number	TP65H050
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	1707-TP65H050G4WS
Standard Package	30

N-Channel 650 V 34A (Tc) 119W (Tc) Through Hole TO-247-3