Parameters |
Mfr |
Transphorm |
Series |
- |
Package |
Cut Tape (CT) |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) |
650 V |
Current - Continuous Drain (Id) @ 25°C |
13A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
180mOhm @ 8.5A, 10V |
Vgs(th) (Max) @ Id |
4.8V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs |
8 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
598 pF @ 400 V |
FET Feature |
- |
Power Dissipation (Max) |
52W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
2-PQFN (8x8) |
Package / Case |
2-PowerTSFN |
Base Product Number |
TP65H150 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
60 |
N-Channel 650 V 13A (Tc) 52W (Tc) Surface Mount 2-PQFN (8x8)