Transphorm TP65H150G4LSG-TR

650 V 13 A GAN FET

Manufacturer: Transphorm
Manufacturer's number: Transphorm TP65H150G4LSG-TR
Package: Tape & Reel (TR)
Datasheet: -
Stock: 2
SKU: TP65H150G4LSG-TR
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Unit Price: $5.4800

Ext Price: $5.4800

Details

Parameters
Mfr	Transphorm
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	180mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id	4.8V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	598 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	2-PQFN (8x8)
Package / Case	2-PowerTSFN
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3,000

N-Channel 650 V 13A (Tc) 52W (Tc) Surface Mount 2-PQFN (8x8)