Parameters |
Mfr |
Transphorm |
Series |
- |
Package |
Cut Tape (CT) |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) |
650 V |
Current - Continuous Drain (Id) @ 25°C |
6.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
8V |
Rds On (Max) @ Id, Vgs |
312mOhm @ 5A, 8V |
Vgs(th) (Max) @ Id |
2.6V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs |
9.6 nC @ 8 V |
Vgs (Max) |
±18V |
Input Capacitance (Ciss) (Max) @ Vds |
760 pF @ 400 V |
FET Feature |
- |
Power Dissipation (Max) |
21W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
3-PQFN (8x8) |
Package / Case |
3-PowerDFN |
Base Product Number |
TP65H300 |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
3,000 |
N-Channel 650 V 6.5A (Tc) 21W (Tc) Surface Mount 3-PQFN (8x8)