| Parameters |
| Mfr |
Transphorm |
| Series |
- |
| Package |
Tape & Reel (TR) |
| Product Status |
Active |
| FET Type |
N-Channel |
| Technology |
GaNFET (Cascode Gallium Nitride FET) |
| Drain to Source Voltage (Vdss) |
650 V |
| Current - Continuous Drain (Id) @ 25°C |
3.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
8V |
| Rds On (Max) @ Id, Vgs |
560mOhm @ 3.4A, 8V |
| Vgs(th) (Max) @ Id |
2.8V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs |
9 nC @ 8 V |
| Vgs (Max) |
±18V |
| Input Capacitance (Ciss) (Max) @ Vds |
760 pF @ 400 V |
| FET Feature |
- |
| Power Dissipation (Max) |
13.2W (Tc) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
3-PQFN (5x6) |
| Package / Case |
3-SMD, Flat Lead |
| Base Product Number |
TP65H480 |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
1707-TP65H480G4JSG-TR |
| Standard Package |
4,000 |
N-Channel 650 V 3.6A (Tc) 13.2W (Tc) Surface Mount 3-PQFN (5x6)