Parameters |
Mfr |
Transphorm |
Series |
- |
Package |
Tray |
Product Status |
Obsolete |
FET Type |
N-Channel |
Technology |
GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) |
650 V |
Current - Continuous Drain (Id) @ 25°C |
16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
8V |
Rds On (Max) @ Id, Vgs |
180mOhm @ 10A, 8V |
Vgs(th) (Max) @ Id |
2.6V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs |
6.2 nC @ 4.5 V |
Vgs (Max) |
±18V |
Input Capacitance (Ciss) (Max) @ Vds |
720 pF @ 480 V |
FET Feature |
- |
Power Dissipation (Max) |
81W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
3-PQFN (8x8) |
Package / Case |
3-PowerDFN |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
1707-TPH3206LSGB |
Standard Package |
1 |
N-Channel 650 V 16A (Tc) 81W (Tc) Surface Mount 3-PQFN (8x8)