IXYS IXTH20N60

IXTH20N60

Manufacturer: IXYS
Manufacturer's number: IXYS IXTH20N60
Package: Tube
Datasheet: PDF
Stock: 4190
SKU: IXTH20N60
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Details

Parameters
HTSUS	8541.29.0095
Standard Package	30
Mfr	IXYS
Series	MegaMOS™
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	350mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	170 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4500 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247 (IXTH)
Package / Case	TO-247-3
Base Product Number	IXTH20
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	Not Applicable
REACH Status	REACH Unaffected
ECCN	EAR99

N-Channel 600 V 20A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)