| Parameters |
| Mfr |
Vishay Siliconix |
| Series |
- |
| Package |
Tape & Reel (TR) |
| Product Status |
Active |
| FET Type |
P-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
200 V |
| Current - Continuous Drain (Id) @ 25°C |
1.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Rds On (Max) @ Id, Vgs |
3Ohm @ 900mA, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
11 nC @ 10 V |
| Vgs (Max) |
±20V |
| Input Capacitance (Ciss) (Max) @ Vds |
170 pF @ 25 V |
| FET Feature |
- |
| Power Dissipation (Max) |
3W (Ta), 20W (Tc) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
D²PAK (TO-263) |
| Package / Case |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Base Product Number |
IRF9610 |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
742-IRF9610STRRPBFTR |
| Standard Package |
800 |
P-Channel 200 V 1.8A (Tc) 3W (Ta), 20W (Tc) Surface Mount D²PAK (TO-263)