| Parameters |
| Mfr |
Vishay Siliconix |
| Series |
- |
| Package |
Tube |
| Product Status |
Active |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
600 V |
| Current - Continuous Drain (Id) @ 25°C |
1.4A (Tc) |
| Rds On (Max) @ Id, Vgs |
7Ohm @ 840mA, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
14 nC @ 10 V |
| Vgs (Max) |
±30V |
| Input Capacitance (Ciss) (Max) @ Vds |
229 pF @ 25 V |
| FET Feature |
- |
| Power Dissipation (Max) |
36W (Tc) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
TO-252AA |
| Package / Case |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Base Product Number |
IRFR1 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
742-IRFR1N60APBF-BE3 |
| Standard Package |
75 |
N-Channel 600 V 1.4A (Tc) 36W (Tc) Surface Mount TO-252AA