Vishay Siliconix SI1965DH-T1-BE3

MOSFET 2P-CH 12V 1.3A SC70-6

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SI1965DH-T1-BE3
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 1056
SKU: SI1965DH-T1-BE3
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Details

Parameters
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.2nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds	120pF @ 6V
Power - Max	740mW (Ta), 1.25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SC-70-6
Base Product Number	SI1965
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3,000
Mfr	Vishay Siliconix
Series	TrenchFET®
Package	Tape & Reel (TR)
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 P-Channel (Dual)
FET Feature	-
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	1.14A (Ta), 1.3A (Tc)
Rds On (Max) @ Id, Vgs	390mOhm @ 1A, 4.5V

Mosfet Array 12V 1.14A (Ta), 1.3A (Tc) 740mW (Ta), 1.25W (Tc) Surface Mount SC-70-6