Vishay Siliconix SI2304BDS-T1-BE3

N-CHANNEL 30-V (D-S) MOSFET

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SI2304BDS-T1-BE3
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 7
SKU: SI2304BDS-T1-BE3
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Details

Parameters
Mfr	Vishay Siliconix
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	70mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	225 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	750mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095
Other Names	742-SI2304BDS-T1-BE3TR
Standard Package	3,000

N-Channel 30 V 2.6A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)