Vishay Siliconix SI3129DV-T1-GE3

P-CHANNEL 80 V (D-S) MOSFET TSOP

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SI3129DV-T1-GE3
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 6042
SKU: SI3129DV-T1-GE3
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Details

Parameters
Package	Tape & Reel (TR)
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	3.8A (Ta), 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	82.7mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	805 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 4.2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	742-SI3129DV-T1-GE3TR
Standard Package	3,000
Mfr	Vishay Siliconix
Series	TrenchFET®

P-Channel 80 V 3.8A (Ta), 5.4A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP