Vishay Siliconix SI3499DV-T1-BE3

P-CHANNEL 1.5-V (G-S) MOSFET

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SI3499DV-T1-BE3
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 2
SKU: SI3499DV-T1-BE3
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Details

Parameters
Mfr	Vishay Siliconix
Series	TrenchFET®
Package	Tape & Reel (TR)
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	8 V
Current - Continuous Drain (Id) @ 25°C	5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	23mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id	750mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 4.5 V
Vgs (Max)	±5V
FET Feature	-
Power Dissipation (Max)	1.1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	742-SI3499DV-T1-BE3TR
Standard Package	3,000

P-Channel 8 V 5.3A (Ta) 1.1W (Ta) Surface Mount 6-TSOP