Vishay Siliconix SI7615BDN-T1-GE3

MOSFET P-CH 20V 29A/104A PPAK

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SI7615BDN-T1-GE3
Package: Cut Tape (CT)
Datasheet: -
Stock: 4392
SKU: SI7615BDN-T1-GE3
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Details

Parameters
Mfr	Vishay Siliconix
Series	-
Package	Cut Tape (CT)
Product Status	Discontinued at Digi-Key
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	29A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs	3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	155 nC @ 10 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	4890 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	5.2W (Ta), 66W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8
Base Product Number	SI7615
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3,000

P-Channel 20 V 29A (Ta), 104A (Tc) 5.2W (Ta), 66W (Tc) Surface Mount PowerPAK® 1212-8