Vishay Siliconix SIA4265EDJ-T1-GE3

P-CHANNEL 20-V (D-S) MOSFET POWE

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SIA4265EDJ-T1-GE3
Package: Tape & Reel (TR)
Datasheet: -
Stock: 6
SKU: SIA4265EDJ-T1-GE3
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Unit Price: $0.4200

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Details

Parameters
Mfr	Vishay Siliconix
Series	TrenchFET®
Package	Tape & Reel (TR)
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	7.8A (Ta), 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	32mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 8 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1180 pF @ 0 V
FET Feature	-
Power Dissipation (Max)	2.9W (Ta), 15.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6
Package / Case	PowerPAK® SC-70-6
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	742-SIA4265EDJ-T1-GE3TR
Standard Package	3,000

P-Channel 20 V 7.8A (Ta), 9A (Tc) 2.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SC-70-6