Vishay Siliconix SIDR510EP-T1-RE3

N-CHANNEL 100 V (D-S) 175C MOSFE

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SIDR510EP-T1-RE3
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 8495
SKU: SIDR510EP-T1-RE3
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Details

Parameters
Mfr	Vishay Siliconix
Series	TrenchFET® Gen V
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	33A (Ta), 148A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	3.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	81 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4980 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	7.5W (Ta), 150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8DC
Package / Case	PowerPAK® SO-8
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095
Standard Package	3,000

N-Channel 100 V 33A (Ta), 148A (Tc) 7.5W (Ta), 150W (Tc) Surface Mount PowerPAK® SO-8DC