Vishay Siliconix SIHB17N80E-T1-GE3

SIHB17N80E-T1-GE3

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SIHB17N80E-T1-GE3
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 1478
SKU: SIHB17N80E-T1-GE3
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Unit Price: $5.1300

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Details

Parameters
Mfr	Vishay Siliconix
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	290mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	122 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2408 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	208W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number	SIHB17
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	742-SIHB17N80E-T1-GE3TR
Standard Package	800

N-Channel 800 V 15A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263)