Vishay Siliconix SIHB24N65EFT1-GE3

N-CHANNEL 650V

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SIHB24N65EFT1-GE3
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 385
SKU: SIHB24N65EFT1-GE3
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Unit Price: $6.0100

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Details

Parameters
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	156mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	122 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2774 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	250W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D²Pak)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	742-SIHB24N65EFT1-GE3TR
Standard Package	800
Mfr	Vishay Siliconix
Series	E
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	24A (Tc)

N-Channel 650 V 24A (Tc) 250W (Tc) Surface Mount TO-263 (D²Pak)