Vishay Siliconix SIHL620S-GE3

LOGIC MOSFET N-CHANNEL 200V

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SIHL620S-GE3
Package: Tube
Datasheet: PDF
Stock: 972
SKU: SIHL620S-GE3
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Details

Parameters
Mfr	Vishay Siliconix
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	800mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 5 V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	360 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.1W (Ta), 50W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50

N-Channel 200 V 5.2A (Tc) 3.1W (Ta), 50W (Tc) Surface Mount D²PAK (TO-263)