Vishay Siliconix SIJH800E-T1-GE3

N-CHANNEL 80-V (D-S) 175C MOSFET

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SIJH800E-T1-GE3
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 2
SKU: SIJH800E-T1-GE3
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Unit Price: $4.8400

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Details

Parameters
Mfr	Vishay Siliconix
Series	TrenchFET® Gen IV
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	29A (Ta), 299A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	1.55mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	210 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10230 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	3.3W (Ta), 333W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 8 x 8
Package / Case	PowerPAK® 8 x 8
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	2,000

N-Channel 80 V 29A (Ta), 299A (Tc) 3.3W (Ta), 333W (Tc) Surface Mount PowerPAK® 8 x 8