Vishay Siliconix SIR1309DP-T1-GE3

P-CHANNEL 30 V (D-S) MOSFET POWE

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SIR1309DP-T1-GE3
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 5
SKU: SIR1309DP-T1-GE3
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Details

Parameters
Mfr	Vishay Siliconix
Series	TrenchFET® Gen IV
Package	Tape & Reel (TR)
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	19.1A (Ta), 65.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	87 nC @ 10 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	3250 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	4.8W (Ta), 56.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3,000

P-Channel 30 V 19.1A (Ta), 65.7A (Tc) 4.8W (Ta), 56.8W (Tc) Surface Mount PowerPAK® SO-8