Vishay Siliconix SIRS5100DP-T1-GE3

N-CHANNEL 100 V (D-S) MOSFET POW

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SIRS5100DP-T1-GE3
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 1586
SKU: SIRS5100DP-T1-GE3
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Unit Price: $3.3100

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Details

Parameters
Mfr	Vishay Siliconix
Series	TrenchFET®
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	39A (Ta), 225A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	2.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	102 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5400 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	7.4W (Ta), 240W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8
Base Product Number	SIRS5100
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Standard Package	3,000

N-Channel 100 V 39A (Ta), 225A (Tc) 7.4W (Ta), 240W (Tc) Surface Mount PowerPAK® SO-8