Vishay Siliconix SIS178LDN-T1-GE3

N-CHANNEL 70 V (D-S) MOSFET POWE

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SIS178LDN-T1-GE3
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 2
SKU: SIS178LDN-T1-GE3
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Details

Parameters
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	70 V
Current - Continuous Drain (Id) @ 25°C	13.9A (Ta), 45.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	9.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	28.5 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1135 pF @ 35 V
FET Feature	-
Power Dissipation (Max)	3.6W (Ta), 39W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3,000
Mfr	Vishay Siliconix
Series	TrenchFET® Gen IV
Package	Tape & Reel (TR)

N-Channel 70 V 13.9A (Ta), 45.3A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8