Vishay Siliconix SQJA12EP-T1_GE3

N-CHANNEL 100-V (D-S) 175C MOSFE

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SQJA12EP-T1_GE3
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 2
SKU: SQJA12EP-T1_GE3
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Unit Price: $1.8800

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Details

Parameters
Mfr	Vishay Siliconix
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	8.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	49.1 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	3635 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-55°C ~ 125°C
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3,000

N-Channel 100 V