| Parameters |
| Current - Continuous Drain (Id) @ 25°C |
62A (Tc) |
| Rds On (Max) @ Id, Vgs |
52mOhm @ 32A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
344 nC @ 10 V |
| Vgs (Max) |
±30V |
| Input Capacitance (Ciss) (Max) @ Vds |
7379 pF @ 100 V |
| FET Feature |
- |
| Power Dissipation (Max) |
625W (Tc) |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-247AD |
| Package / Case |
TO-247-3 |
| Base Product Number |
SQW61 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
742-SQW61N65EF-GE3 |
| Standard Package |
30 |
| Mfr |
Vishay Siliconix |
| Series |
Automotive, AEC-Q101, E |
| Package |
Tube |
| Product Status |
Active |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
650 V |
N-Channel 650 V 62A (Tc) 625W (Tc) Through Hole TO-247AD