Parameters |
Mfr |
IXYS |
Series |
HiPerFET™, Ultra X |
Package |
Tube |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
850 V |
Current - Continuous Drain (Id) @ 25°C |
50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
105mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id |
5.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs |
152 nC @ 10 V |
Vgs (Max) |
±30V |
Input Capacitance (Ciss) (Max) @ Vds |
4480 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
890W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
TO-268HV (IXFT) |
Package / Case |
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Base Product Number |
IXFT50 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
30 |
N-Channel 850 V 50A (Tc) 890W (Tc) Surface Mount TO-268HV (IXFT)