| Parameters |
| Mfr |
WeEn Semiconductors |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
1200 V |
| Current - Continuous Drain (Id) @ 25°C |
24A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) |
20V |
| Rds On (Max) @ Id, Vgs |
196mOhm @ 10A, 20V |
| Vgs(th) (Max) @ Id |
4.5V @ 3mA |
| Gate Charge (Qg) (Max) @ Vgs |
35 nC @ 20 V |
| Vgs (Max) |
+25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds |
736 pF @ 1000 V |
| FET Feature |
- |
| Power Dissipation (Max) |
155W (Ta) |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-247-3 |
| Package / Case |
TO-247-3 |
| Base Product Number |
WNSCM160120 |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Standard Package |
600 |
N-Channel 1200 V 24A (Ta) 155W (Ta) Through Hole TO-247-3