| Parameters |
| Mfr |
Microchip Technology |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| Transistor Type |
NPN |
| Voltage - Collector Emitter Breakdown (Max) |
40 V |
| Vce Saturation (Max) @ Ib, Ic |
1.5V @ 15mA, 150mA |
| Current - Collector Cutoff (Max) |
10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
40 @ 150mA, 10V |
| Power - Max |
600 mW |
| Frequency - Transition |
- |
| Operating Temperature |
-65°C ~ 200°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package |
TO-39 |
| Base Product Number |
2N697 |
| RoHS Status |
RoHS non-compliant |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0095 |
| Standard Package |
1 |
Bipolar (BJT) Transistor NPN 40 V 600 mW Through Hole TO-39