Parameters |
Mfr |
XSemi Corporation |
Series |
XP60AN750 |
Package |
Tube |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
600 V |
Current - Continuous Drain (Id) @ 25°C |
10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
750mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
59.2 nC @ 10 V |
Vgs (Max) |
±30V |
Input Capacitance (Ciss) (Max) @ Vds |
2688 pF @ 100 V |
FET Feature |
- |
Power Dissipation (Max) |
1.92W (Ta), 36.7W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-220CFM |
Package / Case |
TO-220-3 Full Pack |
Base Product Number |
XP60 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Other Names |
5048-XP60AN750IN |
Standard Package |
50 |
N-Channel 600 V 10A (Tc) 1.92W (Ta), 36.7W (Tc) Through Hole TO-220CFM