| Parameters |
| Mfr |
XSemi Corporation |
| Series |
XP60AN750 |
| Package |
Tube |
| Product Status |
Active |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
600 V |
| Current - Continuous Drain (Id) @ 25°C |
10A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Rds On (Max) @ Id, Vgs |
750mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
59.2 nC @ 10 V |
| Vgs (Max) |
±30V |
| Input Capacitance (Ciss) (Max) @ Vds |
2688 pF @ 100 V |
| FET Feature |
- |
| Power Dissipation (Max) |
1.92W (Ta), 36.7W (Tc) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-220CFM |
| Package / Case |
TO-220-3 Full Pack |
| Base Product Number |
XP60 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Other Names |
5048-XP60AN750IN |
| Standard Package |
50 |
N-Channel 600 V 10A (Tc) 1.92W (Ta), 36.7W (Tc) Through Hole TO-220CFM