Parameters |
Mfr |
XSemi Corporation |
Series |
XP83T03 |
Package |
Tube |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
30 V |
Current - Continuous Drain (Id) @ 25°C |
75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
6mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
34 nC @ 4.5 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
1840 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
60W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-251S |
Package / Case |
TO-251-3 Short Leads, IPak, TO-251AA |
Base Product Number |
XP83 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Other Names |
5048-XP83T03GJB |
Standard Package |
80 |
N-Channel 30 V 75A (Tc) 60W (Tc) Through Hole TO-251S