Parameters |
Mfr |
EPC Space, LLC |
Series |
eGaN® |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) |
100 V |
Current - Continuous Drain (Id) @ 25°C |
80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
5V |
Rds On (Max) @ Id, Vgs |
6mOhm @ 40A, 5V |
Vgs(th) (Max) @ Id |
2.5V @ 12mA |
Gate Charge (Qg) (Max) @ Vgs |
11.7 nC @ 5 V |
Vgs (Max) |
+6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds |
1240 pF @ 50 V |
FET Feature |
- |
Power Dissipation (Max) |
- |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
5-SMD |
Package / Case |
5-SMD, No Lead |
RoHS Status |
RoHS non-compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Affected |
Other Names |
4107-EPC7018GSH |
Standard Package |
1 |
N-Channel 100 V 80A (Tc) Surface Mount 5-SMD