Diodes Incorporated DMN3732UFB4Q-7B

MOSFET BVDSS: 25V~30V X2-DFN1006

Manufacturer: Diodes Incorporated
Manufacturer's number: Diodes Incorporated DMN3732UFB4Q-7B
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 8
SKU: DMN3732UFB4Q-7B
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Unit Price: $0.3400

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Details

Parameters
Mfr	Diodes Incorporated
Series	Automotive, AEC-Q101
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	460mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.9 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	40.8 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	490mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	X2-DFN1006-3
Package / Case	3-XFDFN
Base Product Number	DMN3732
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095
Standard Package	10,000

N-Channel 30 V 1.3A (Ta) 490mW (Ta) Surface Mount X2-DFN1006-3