Diodes Incorporated DMP10H4D2S-7-50

MOSFET BVDSS: 61V~100V SOT23 T&R

Manufacturer: Diodes Incorporated
Manufacturer's number: Diodes Incorporated DMP10H4D2S-7-50
Package: Bulk
Datasheet: PDF
Stock: 3785
SKU: DMP10H4D2S-7-50
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Details

Parameters
Mfr	Diodes Incorporated
Series	-
Package	Bulk
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	4.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.8 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	87 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	380mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3
Package / Case	TO-236-3, SC-59, SOT-23-3
Base Product Number	DMP10
ECCN	EAR99
HTSUS	8541.21.0095
Other Names	31-DMP10H4D2S-7-50
Standard Package	3,000

P-Channel 100 V 270mA (Ta) 380mW (Ta) Surface Mount SOT-23-3