Diodes Incorporated DMT35M4LFVW-7

MOSFET BVDSS: 25V~30V POWERDI333

Manufacturer: Diodes Incorporated
Manufacturer's number: Diodes Incorporated DMT35M4LFVW-7
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 2
SKU: DMT35M4LFVW-7
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Unit Price: $0.1983

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Details

Parameters
Mfr	Diodes Incorporated
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	16A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16.1 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	982 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	1.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount, Wettable Flank
Supplier Device Package	PowerDI3333-8 (SWP) Type UX
Package / Case	8-PowerVDFN
Base Product Number	DMT35M4LF
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	31-DMT35M4LFVW-7TR
Standard Package	2,000

N-Channel 30 V 16A (Ta), 60A (Tc) 1.5W (Ta) Surface Mount, Wettable Flank PowerDI3333-8 (SWP) Type UX