Diodes Incorporated DMT67M8LK3-13

MOSFET BVDSS: 41V~60V TO252 T&R

Manufacturer: Diodes Incorporated
Manufacturer's number: Diodes Incorporated DMT67M8LK3-13
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 6346
SKU: DMT67M8LK3-13
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Details

Parameters
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	87A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	37.5 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2130 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	3.1W (Ta), 89.3W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252, (D-Pak)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	31-DMT67M8LK3-13TR
Standard Package	2,500
Mfr	Diodes Incorporated
Series	-

N-Channel 60 V 87A (Tc) 3.1W (Ta), 89.3W (Tc) Surface Mount TO-252, (D-Pak)