Diodes Incorporated DMTH12H007SK3-13

MOSFET BVDSS: 101V~250V TO252 T&

Manufacturer: Diodes Incorporated
Manufacturer's number: Diodes Incorporated DMTH12H007SK3-13
Package: Bulk
Datasheet: PDF
Stock: 9191
SKU: DMTH12H007SK3-13
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Unit Price: $0.7541

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Details

Parameters
Mfr	Diodes Incorporated
Series	-
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	120 V
Current - Continuous Drain (Id) @ 25°C	86A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	8.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3142 pF @ 60 V
FET Feature	-
Power Dissipation (Max)	2W (Ta)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252, (D-Pak)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number	DMTH12
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	31-DMTH12H007SK3-13
Standard Package	2,500

N-Channel 120 V 86A (Tc) 2W (Ta) Surface Mount TO-252, (D-Pak)