Fairchild Semiconductor FDFM2N111

MOSFET N-CH 20V 4A MICROFET

Manufacturer: Fairchild Semiconductor
Manufacturer's number: Fairchild Semiconductor FDFM2N111
Package: Bulk
Datasheet: PDF
Stock: 7963
SKU: FDFM2N111
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Details

Parameters
Mfr	Fairchild Semiconductor
Series	PowerTrench®
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	100mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	3.8 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	273 pF @ 10 V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	1.7W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	MicroFET 3x3mm
Package / Case	6-WDFN Exposed Pad
ECCN	EAR99
HTSUS	8542.39.0001
Standard Package	1

N-Channel 20 V 4A (Ta) 1.7W (Ta) Surface Mount MicroFET 3x3mm