Fairchild Semiconductor FDP3652

POWER FIELD-EFFECT TRANSISTOR, 9

Manufacturer: Fairchild Semiconductor
Manufacturer's number: Fairchild Semiconductor FDP3652
Package: Bulk
Datasheet: PDF
Stock: 3778
SKU: FDP3652
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Details

Parameters
Mfr	Fairchild Semiconductor
Series	PowerTrench®
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	9A (Ta), 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	16mOhm @ 61A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	53 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2880 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
ECCN	EAR99
HTSUS	8542.39.0001
Standard Package	1

N-Channel 100 V 9A (Ta), 61A (Tc) 150W (Tc) Through Hole TO-220-3