Fairchild Semiconductor FDP8N50NZ

POWER FIELD-EFFECT TRANSISTOR, 8

Manufacturer: Fairchild Semiconductor
Manufacturer's number: Fairchild Semiconductor FDP8N50NZ
Package: Bulk
Datasheet: PDF
Stock: 3430
SKU: FDP8N50NZ
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Details

Parameters
Mfr	Fairchild Semiconductor
Series	UniFET™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	850mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	735 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	130W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
HTSUS	0000.00.0000
Standard Package	1

N-Channel 500 V 8A (Tc) 130W (Tc) Through Hole TO-220-3