Fairchild Semiconductor HUF75639G3

N-CHANNEL ULTRAFET POWER MOSFET

Manufacturer: Fairchild Semiconductor
Manufacturer's number: Fairchild Semiconductor HUF75639G3
Package: Bulk
Datasheet: PDF
Stock: 3619
SKU: HUF75639G3
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Details

Parameters
Mfr	Fairchild Semiconductor
Series	UltraFET™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	25mOhm @ 56A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	130 nC @ 20 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1

N-Channel 100 V 56A (Tc) 200W (Tc) Through Hole TO-247