Goford Semiconductor 1002

N100V,RD(MAX)<250M@10V,RD(MAX)<2

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Details

N-Channel 100 V 2A 1.3W Surface Mount SOT-23

Parameters
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	2A
Rds On (Max) @ Id, Vgs	250mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	387 pF @ 10 V
Power Dissipation (Max)	1.3W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23
Package / Case	TO-236-3, SC-59, SOT-23-3
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3,000