Goford Semiconductor G09P02L

P20V,RD(MAX)<23M@-4.5V,RD(MAX)<3

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor G09P02L
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 3
SKU: G09P02L
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Details

Parameters
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	23mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	620 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	2.2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3
Package / Case	TO-236-3, SC-59, SOT-23-3
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3,000

P-Channel 20 V 9A (Tc) 2.2W (Tc) Surface Mount SOT-23-3