Goford Semiconductor GT035N10M

N100V, 190A,RD<3.5M@10V,VTH2V~4V

Quantity:

Add to Cart

Unit Price: $2.8500

Ext Price: $2.8500

Details

N-Channel 100 V 190A (Tc) 277W (Tc) Surface Mount TO-263

Parameters
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	190A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	68 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6188 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	277W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHS Status	RoHS Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
ECCN	EAR99
HTSUS	8541.29.0000
Standard Package	800