Goford Semiconductor GT52N10D5I

N100V,65A,RD<8M@10V,VTH1.0V~2.5V

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor GT52N10D5I
Package: Tape & Reel (TR)
Datasheet: -
Stock: 6547
SKU: GT52N10D5I
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Details

Parameters
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8Ohm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2428 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	79W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-DFN (4.9x5.75)
Package / Case	8-PowerTDFN
RoHS Status	RoHS Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0000
Other Names	3141-GT52N10D5ITR
Standard Package	5,000

N-Channel 100 V 65A (Tc) 79W (Tc) Surface Mount 8-DFN (4.9x5.75)