Harris Corporation IRFD9110

0.7A 100V 1.200 OHM P-CHANNEL

Manufacturer: Harris Corporation
Manufacturer's number: Harris Corporation IRFD9110
Package: Bulk
Datasheet: PDF
Stock: 15
SKU: IRFD9110
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Unit Price: $0.3700

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Details

Parameters
Mfr	Harris Corporation
Series	-
Package	Bulk
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 420mA, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.7 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	200 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.3W (Ta)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Package / Case	4-DIP (0.300", 7.62mm)
Base Product Number	IRFD9110
RoHS Status	RoHS non-compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	0000.00.0000
Standard Package	807

P-Channel 100 V 700mA (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP